Main Features
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Passivated edge technology, higher efficiency
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Bifaciality≥80%, higher power generation
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Better performance in low irradiance environment
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N-ype wafer, LID free naturally
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Better anti-PID and anti-LeTID performance, better reliability
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Temperature coefficient as low as 0.30%/K
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SMBB multi busbar design, lower internal resistance loss
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Protocol & Standards
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ISO9001:2015 Quality Management System
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ISO14001:2015 Environment Management System
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ISO45001:2018 Occupational Health and Safety Management Systems
Technical Specification
LY-NM10EB-16B-L-F
| Mechanical Characteristics | |
|---|---|
| Dimension | 182.2mmx91.88mm±0.25mm |
| Thickness | 130μm±13μm |
| Front side | 16busbar,86fingers,busbar width 0.020+0.015mm |
| Rear side | 16busbar,90fingers,busbar width 0.018+0.015mm |
| TkCurrent | +0.045%/K |
| TkVoltag | −0.25%/K |
| TkPower | −0.30%/K |
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